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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION *High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V *High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) APPLICATIONS *Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Base Current- Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 200 200 7 15 22 1 2 100 150 -55~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO fT hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current Emitter Cutoff Current Current-Gain--Bandwidth Product DC Current Gain CONDITIONS IC= 0.1A, IB= 0 IC= 10A ,IB= 30mA IC= 10A ,IB= 30mA VCB= 200V, IE= 0 VCE= 200V, IB= 0 B 2SD1027 MIN 200 TYP. MAX UNIT V 1.5 2.0 0.1 0.1 5 20 1500 V V mA mA mA MHz VEB= 7V; IC= 0 IC= 1.5A ; VCE= 10V IC= 10A ; VCE= 3V Switching Times Turn-On Time Storage Time Fall Time IC = 10A,IB1 = -IB2= 30mA; RL= 3;VBB2= 4V 2.0 8.0 5.0 s s s ton tstg tf isc Websitewww.iscsemi.cn |
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